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Soft-error tolerant design in near-threshold-voltage computing

机译:近阈值电压计算中的软误差耐受设计

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In the advanced CMOS VLSI designs, lower supply voltage and smaller transistor lead to critical design challenges in dealing with soft-error interference, especial for the deisgn operating under near-threshold voltage. Some possible near-threshold voltage SEU-tolerant and SET-tolerant circuit design methods are discussed in this paper, such as robust C-element, Dual-Modular-Redundancy, Error-Correction with Duplication, and Error-Correction-with-shift-Timing-Output designs.
机译:在高级CMOS VLSI设计中,较低的电源电压和较小的晶体管导致关键的设计挑战在处理软误差干扰时,特别是在近阈值电压下操作的Deisgn。本文讨论了一些可能的近阈值电压SEU耐受和耐受电路设计方法,例如坚固的C元素,双模冗余,纠错,重复,以及纠错 - 换档 - 时序输出设计。

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