首页> 外文会议>Proceedings of the 32nd International Conference on Metallurgical Coatings and Thin Films (ICMCTF-32 2005) >Hypersonic plasma particle deposition of Si–Ti–N nanostructured coatings
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Hypersonic plasma particle deposition of Si–Ti–N nanostructured coatings

机译:Si-Ti-N纳米涂层的高超声速等离子体沉积

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Si–Ti–N coatings with various compositions were deposited on molybdenum substrates using hypersonic plasma particle deposition (HPPD). In this method, vapor phase precursors (TiCl4, SiCl4 and NH3) are dissociated in a DC plasma arc and the hot gas is quenched in a rapid nozzle expansion to nucleate nanoparticles. These nanoparticles are then accelerated in hypersonic flow, causing them to deposit by ballistic impaction on a substrate placed downstream of the nozzle. Films of 10–25 Am thickness were deposited at rates of 2–10 Am/min, depending on reactant flow rates, at substrate temperatures ranging from 200 to 850 8C. When the reactant gases were premixed the coatings consisted of nc-TiN, nc-TiSi2, nc-Ti5Si3 and amorphous Si3N4. For the unpremixed reactants case, the coatings consisted of free Si, nc-TiN and amorphous Si3N4. Hardness of as-deposited films was evaluated by nanoindentation of polished film cross-sections. Measured hardness values, averaged over 10–15 locations for each film, ranged from 16–24 GPa. In separate experiments with the same conditions, particle size distributions were measured by placing a sampling probe at the same location as the film substrate. The sampled aerosol was rapidly diluted and delivered to a scanning mobility particle sizer (SMPS). In-situ particle size distribution measurements confirmed that the coatings were formed by impaction of nanoparticles in the 5–15 nm range, with higher reactant flow rates producing larger particles. Focused ion beam (FIB) milling was used to observe film cross-section and porosity. For as-deposited films containing pores, in-situ plasma sintering was used to densify the film without grain growth.
机译:使用高超声速等离子体沉积(HPPD)将具有各种成分的Si-Ti-N涂层沉积在钼基底上。在此方法中,气相前驱物(TiCl4,SiCl4和NH3)在DC等离子弧中解离,并且热气在快速喷嘴扩展中骤冷以使纳米颗粒成核。然后,这些纳米颗粒在高超声速流中加速,导致它们通过弹道碰撞沉积在喷嘴下游的基材上。在200至850 8C的基材温度下,以2-10 Am / min的速率沉积10–25 Am厚度的薄膜,具体取决于反应物的流速。当将反应气体预混合时,涂层由nc-TiN,nc-TiSi2,nc-Ti5Si3和非晶Si3N4组成。对于未预混合的反应物,涂层由游离Si,nc-TiN和非晶Si3N4组成。通过抛光膜横截面的纳米压痕评估沉积膜的硬度。测量的硬度值,平均每个薄膜的10–15个位置,范围为16–24 GPa。在具有相同条件的单独实验中,通过将采样探针放置在与薄膜基材相同的位置来测量粒度分布。将采样的气雾剂迅速稀释并送至扫描迁移率粒度仪(SMPS)。原位粒度分布测量结果证实,涂层是由5-15 nm范围内的纳米颗粒撞击形成的,较高的反应物流速产生较大的颗粒。使用聚焦离子束(FIB)研磨观察薄膜的横截面和孔隙率。对于含有孔的沉积膜,原位等离子体烧结被用于致密化膜而没有晶粒生长。

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