Development of the Next Generation of Insulated Gate Bipolar Transistors Based on Trench Technology

摘要

This paper presents preliminary results towards developing the next generation of Insulated Gate Bipolr Transistors for high voltage applications. Technological issues such as the trench profile, the gate oxide quality, the trench inversion layer mobility and lay-out design are discussed. Optimization of 1.8kV Trench 1GBTs using extensive numerical simulations and physical analysis is carried out. New termination techniques are proposed.