Fabrication of 0.1#mu#m MOSFET with Super Self-Aligned Ultrashallow Junction Electrods using Selective Si_(1-x)Ge_x CVD

摘要

Fabrication process of 0.1#mu#m MOSFET's were developed with Super Self-aligned ultra-Shallow junction Electrode(S~3EMOSFET)by utilizing in-situ impurity doped Si_(1-x)Ge_x slective epitaxy on the source/drain regions at 550 deg C by CVD. NOrmal saturation characteristics were observed and the threshold voltage scarcely showed a shift with the gate length, which means that the short channel effect is greatly suppressed in the S~3EMOSFET. Further improvements of the current drivability were performed by annealing and selective tungsten growth. The results show very high potentials of this device for an ultrasmall MOSFET, because theeffective channel length is almost the same as the fabricated gate length and the source/drain junctions are ectremely shallow.