Investigation of the influence of thermal phenomena on characteristics of IGBTs contained in power modules

摘要

This paper concerns the impact of mutual thermal coupling between transistors and diodes contained in one power module and self-heating phenomenon on dc characteristics of these devices. For each type of the device, located inside the module, characteristics were measured for three different values of the power dissipated in the other devices, which are located in the same module. Particular attention was paid to the influence of mutual thermal coupling at the limits of safe operation area of the transistors and the maximum current of diodes contained in the module.