Engineering of p-n junction for high efficiency semiconducting BaSi2 based thin film solar cells

摘要

Fabrication of p-n structure for any photovoltaic device is a crucial step. In this paper optimized growth of B-doped p-BaSi2 layer grown by molecular beam epitaxy on Si(111) were presented first. The acceptor level of the B-atoms was estimated to be approximately 23 meV. High hole concentrations exceeding 1×10²⁰ cm⁻³ were achieved via dopant activation using RTA at 800 °C in Ar. By using this optimized growth condition a novel p-n structure were also grown on un-doped BaSi2 and Si(111) substrate. SIMS profile gives us no diffusion and segregation tendency across the homojunction as well as across the hetrojunction of Solar cells. The novel p-n junction is one step behind the practical semiconducting BaSi2 solar cells p-n junction.