Using zero thermal coefficient point property for VDMOS power devices health monitoring

摘要

This paper deals with the power assembly failure anticipation by monitoring its mechanical state. From this perspective, we evaluate the impact of mechanical stress accumulation before crack opening on the electrical characteristics of a VDMOS transistor using 2D physical simulations. The power device I(V) characteristics depend both on temperature and mechanical stress. To estimate the impact of mechanical stress on the VDMOS I(V) characteristics, we exploit the VDMOS Zero Thermal Coefficient operating point. At this operating point, the VDMOS I(V) characteristics are temperature independent.