首页> 外文会议>Powder Metallurgy World Congress amp; Exhibition(PM 2006); 20060924-28; Busan(KR) >Metal Plasma Source Ion Implantation Using a Pulsed Cathodic Arc
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Metal Plasma Source Ion Implantation Using a Pulsed Cathodic Arc

机译:使用脉冲阴极电弧的金属等离子体源离子注入

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Combining nano-designed plasma source ion implantation and deposition (PSII&D) method has been developed with the pulsed cathodic arc plasma to make a processing system suitable for surface modification of materials such as metals, plastics and ceramics. By controlling the arc plasma pulse and the target pulse, the surface modification can be changed from plasma deposition to ion implantation. Various versions of applying high-voltage pulse bias are described and compared with other methods. Microstructural changes of the nanometered gold films with/without a high voltage bias, concentration profiles of implanted aluminum ions on the surfaces of complex-shaped trench are discussed.
机译:结合了纳米设计的等离子体源离子注入和沉积(PSII&D)方法与脉冲阴极电弧等离子体的组合,使该处理系统适用于金属,塑料和陶瓷等材料的表面改性。通过控制电弧等离子体脉冲和目标脉冲,可以将表面改性从等离子体沉积更改为离子注入。描述了施加高压脉冲偏置的各种版本,并将其与其他方法进行了比较。讨论了具有/不具有高电压偏置的纳米金膜的微观结构变化,讨论了复杂形状沟槽表面上注入的铝离子的浓度分布。

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