Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;
Department of Electrical Engineering, Kao-Yuan University, Lu-Chu, Kaoshiung, Taiwan;
Transcom Inc., Tainan, Taiwan;
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;
机译:短期直流偏置引起的应力对以液相沉积$ hbox {Al} _ {2} hbox {O} _ {3} $作为栅介质的n-GaN / AlGaN / GaN MOSHEMT的影响
机译:室温射频磁控溅射实现的具有高品质$ hbox {Gate} $ – $ hbox {SiO} _ {2} $的AlGaN / GaN MOSHEMT
机译:EPI-GD2O₃-MOSHEMT:利用ALGAN / GAN / SI HEMT的潜在解决方案在473 k下运行的改进的ION / IOFF应用
机译:N-GaN上钡掺杂TiO_2的室温液相沉积及其在Algan / Gan MoShemts应用
机译:Algan / Gan MoShemts诱捕效应研究
机译:氧等离子体处理对采用PECVD SiO2栅极绝缘体的原位SiN / AlGaN / GaN MOSHEMT的影响
机译:门嵌入式AlGaN / GaN Fin-Nanichannel阵列MoShemts中的缩放效果