Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012, India;
Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012, India,Department of Metallurgical and Materials Engineering, NIT Surathkal 575025, India;
Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012, India;
Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012, India;
Department of Metallurgical and Materials Engineering, NIT Surathkal 575025, India;
Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India;
grapheme; silicon; electronic band structure; work function; molecular dynamics; density functional theory;
机译:在SiC上揭示三层石墨烯的电子能带结构:角度分辨光发射研究
机译:通过直接和逆光曝光研究的EU_2O_3薄膜的化学计量,带对准和电子结构:电子频带结构的重新评估
机译:三元化合物U_3M_2M'_3,M = Al,Ga,M'= Si,Ge的X射线光发射光谱和电子能带结构
机译:硅掺杂石墨烯的结构,振动和电子光谱
机译:电子带结构影响单层,双层和杂化石墨烯结构。
机译:探索单原子厚的多晶石墨烯薄膜的电子结构:纳米角分辨光发射研究
机译:揭示siC上三层石墨烯的电子能带结构:an 角分辨光电子发射研究