Photoluminescence Investigations of InGaAsN Alloys Lattice-Matched to GaAs

摘要

InGaAsN is a semiconductor alloy system with the property that the inclusion of only 2percent nitrogen reduces the bandgap by more than 30percent. In this paper, we have measured the conduction-band mass by three different techniques for 2percent nitrogen in InGaAsN lattice matched to GaAs. Additionally, we also report pressure dependent measurements of the conduction-band mass between ambient and 40 kbar. Based on our results, we suggest that the observed changes in masses are a result of #GAMMA#-X mixing.