During-growth quantitative metrology of epitaxial quantum dots by reflection high energy electron diffraction

摘要

Within the context of the archetype InAs/GaAs self assembled quantum dot system, we provide an in situ, methodology based on the analysis of reflection high energy electron diffraction (RHEED) patterns and demonstrate its ability for real time and simultaneous determination of the quantum dots facet orientations, average size (height), strain profile, and dot-density during the molecular beam and chemical beam epitaxy growth.