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Taguchi optimization for SU-8 photoresist and its a

机译:Taguchi优化SU-8光刻胶及其工艺

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Abstract: In this paper, the optimization and application results of SU-8 are reported. SU-8 is an ultra-thick, negative, epoxy- type, near UV photoresist based on EPON SU-8 resins from Microchem Corp. SU-8 is a highly photosensitive resist and its properties are greatly affected by the process parameters. The parameters, which have influence on the properties, were optimized by three level, L9 Orthogonal Array of Taguchi Method. Two kinds of photoresists, SU-8 and SU-8 50, and four parameters such as the prebake time, postbake time, exposure time and developing time were chosen to optimize. We found that there exist some minor differences between out result and the published data. This different could be due to either the EPON SU-8 content or the fabrication conditions. According to the optimized data, for SU-8 and SU-8 50, many microstructures with thickness more than 100, 500 $mu@m and aspect ratio more than 20, 50 were obtained, respectively. All these were achieve without the introduction of GPL, a stronger developing solution. The positive photoresists AZ9260 with thickness more than 20 micron were patterned as the sacrificial layer. Using SU-8 as the structural layer, we fabricated some micro-components such as micro-cantilevers, microchannels and micro- heatpipes. The primary experiments demonstrated that SU-8 could be used as the structural material for micro- components and even for some MicroElectroMechanical Systems. !6
机译:摘要:本文报道了SU-8的优化和应用结果。 SU-8是超薄,负性,环氧型,近紫外光致抗蚀剂,基于Microchem Corp.的EPON SU-8树脂。SU-8是高感光性抗蚀剂,其性能受工艺参数的影响很大。通过三级田口方法的L9正交阵列对影响性能的参数进行了优化。选择两种光刻胶SU-8和SU-8 50以及预烘烤时间,后烘烤时间,曝光时间和显影时间四个参数进行优化。我们发现结果与发布的数据之间存在一些细微的差异。这种差异可能是由于EPON SU-8含量或制造条件所致。根据优化的数据,对于SU-8和SU-8 50,分别获得了许多厚度大于100、500μm和纵横比大于20、50的微结构。所有这些都是在没有引入更强大的开发解决方案GPL的情况下实现的。将厚度大于20微米的正型光刻胶AZ9260图案化为牺牲层。使用SU-8作为结构层,我们制造了一些微组件,例如微悬臂梁,微通道和微热管。初步实验表明,SU-8可用作微型部件甚至某些微机电系统的结构材料。 !6

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