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Taguchi optimization for the processing of Epon SU-8 resist

机译:Taguchi优化处理Epon SU-8抗蚀剂

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Using the Taguchi technique an optimization experiment was performed to characterize the processing of Epon SU-8 negative photoresist. This photoresist has proven to be very sensitive to process variations and difficult to use. The Taguchi method reveals output sensitivity to variations in control factors. Using five processing parameters as control factors, experiments were performed and results were evaluated by comparison to ideal output characteristics. Analyzing the results, a proposed fabrication process was derived from optimizing the control factors for the best overall mean across all the outputs. The experiment was repeated for three film thicknesses: 50 /spl mu/m, 100 /spl mu/m,and 220 /spl mu/m. The desired output characteristics were straight sidewall profile, fine line and space resolution, and adhesion to substrate. Tables show optimized processing parameters for these three film thicknesses.
机译:使用Taguchi技术进行了优化实验,以表征Epon SU-8负性光刻胶的工艺。该光致抗蚀剂已被证明对工艺变化非常敏感并且难以使用。 Taguchi方法揭示了输出对控制因素变化的敏感性。使用五个处理参数作为控制因子,进行了实验,并通过与理想输出特性的比较来评估结果。分析结果后,通过优化控制因子以在所有输出中获得最佳总体均值,得出了建议的制造过程。对三种膜厚度重复该实验:50μl/splμm/ m,100μl/splμm/ m和220μl/splμm/ m。所需的输出特性是笔直的侧壁轮廓,细线和空间分辨率以及对基材的附着力。表中显示了这三种膜厚度的优化处理参数。

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