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Model-Based Insertion of Assist Features Using Pixel Inversion Method: Implementation in 65nm Node

机译:使用像素反转方法的基于模型的辅助特征插入:在65nm节点中的实现

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Sub-resolution assist feature (SRAF) is widely used to improve lithographic performance. Rule-based SRAF insertion has been working well for one dimensional cases but becomes quite complex for 2-dimentional arbitrary layout. In addition, the best rule generation involves a large amount of simulation and empirical data collection. Therefore model-based SRAF insertion is much more desirable especially for 65nm node and below. In this work we use the newly developed pixel inversion method for a true model-based SRAF insertion. We'll extend our work from contact layer to lines and spaces layer to demonstrate the capability of this method for all critical layers of 65nm node. This method will be used in combination with model-based OPC to achieve the required overlapping process window and CD control. Furthermore, the manufacture issues such as mask making time and mask inspection will be examined and reported.
机译:次分辨率辅助功能(SRAF)被广泛用于改善光刻性能。基于规则的SRAF插入在一维情况下一直运行良好,但对于二维任意布局而言却变得相当复杂。另外,最佳规则的生成涉及大量的模拟和经验数据收集。因此,特别是对于65nm及以下的节点,基于模型的SRAF插入更为可取。在这项工作中,我们使用新开发的像素反演方法进行基于真实模型的SRAF插入。我们将把工作范围从接触层扩展到线和间隔层,以演示此方法对65nm节点的所有关键层的功能。该方法将与基于模型的OPC结合使用,以实现所需的重叠过程窗口和CD控制。此外,将检查并报告诸如掩模制造时间和掩模检查之类的制造问题。

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