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Photoelectric Properties of Isotype Heterojunctions n-InSe < REE > -CuInSe_2 in Visible and Near IR-Region

机译:同形异质结n-InSe / n-CuInSe_2在可见和近红外区域的光电性能

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By the method of landing to optical contact isotype n-InSe < REE > -CuInSe_2 heterojunctions with percentage of introduced impurity N_(REE) = 0; 10~(-5); 10~(-4); 10~(-3); 10~(-2) and 10~(-1) at. % rare-earth elements (REE) of gadolinium, holmium and dysprosium have been created. Their photoelectric properties in photoconductivity, photo-e.m.f. and photovoltaic modes have been investigated at different orientations of incident light relative to contacting components and temperatures (at 77 and 300 K). Appreciable dependence of the basic photo-electric characteristics of investigated structures on N_(REE) have been found out and mechanisms for their explanations have been offered.
机译:通过落入光接触同种型n-InSe / n-CuInSe_2异质结的方法,引入的杂质百分比为N_(REE)= 0; 10〜(-5); 10〜(-4); 10〜(-3); 10〜(-2)和10〜(-1)at。已创建了,、和的%稀土元素(REE)。它们在光电导率上的光电性能photo-e.m.f。在入射光相对于接触组件和温度(在77和300 K)下的不同方向上,已经研究了光伏模式和光伏模式。已经找到了N_(REE)对所研究结构的基本光电特性的明显依赖,并提供了解释它们的机理。

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