Photoelectric Properties of Isotype Heterojunctions n-InSe < REE > -CuInSe_2 in Visible and Near IR-Region

摘要

By the method of landing to optical contact isotype n-InSe < REE > -CuInSe_2 heterojunctions with percentage of introduced impurity N_(REE) = 0; 10~(-5); 10~(-4); 10~(-3); 10~(-2) and 10~(-1) at. % rare-earth elements (REE) of gadolinium, holmium and dysprosium have been created. Their photoelectric properties in photoconductivity, photo-e.m.f. and photovoltaic modes have been investigated at different orientations of incident light relative to contacting components and temperatures (at 77 and 300 K). Appreciable dependence of the basic photo-electric characteristics of investigated structures on N_(REE) have been found out and mechanisms for their explanations have been offered.