Modeling of novel resist technologies

摘要

In response to the diffculties posed by the resolution, line edge roughness, sensitivity (RLS) trade-off totraditional chemically amplified resist (CAR) systems used for extreme ultraviolet lithography, a number ofnovel resist technologies have been proposed. In this paper, the effect of quencher loading on three resisttechnologies is analyzed via an error propagation-based resist simulator. In order of increasing novelty as wellas complexity, they are: conventional CAR with quencher, CAR with photodecomposable base, and PSCAR2.0, a CAR system with photodecomposable base as well as an EUV-activated UV-sensitive resist component.Simulation finds the more complicated resist systems trade in an increase in resist stochastics for improveddeprotection slopes, yielding a net benefit in terms of line width roughness.