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Non-ideal behavior in a model system: Contact degradation in a molecularly doped polymer revealed by variable-temperature electric force microscopy

机译:模型系统中的非理想行为:可变温度电子显微镜显示分子掺杂聚合物中的接触降解

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We present an electric force microscope and transport study of the degradation of the contact between Au and TPD, a triarylamine widely employed as a hole transporting layer in light emitting diodes. TPD was dispersed into a polystyrene (PS) binder and spin casted onto a quartz substrate with coplanar gold electrodes. Electric force microscopy was used to map the electrostatic potential drop in the device channel while a voltage was applied and the current was measured. Two contact degradation mechanisms were observed. When the TPD-PS film was allowed to age in high vacuum, the TPD crystallized out of solution. We show that the observed loss of current is the result of both a decrease in bulk mobility and a decrease in injection efficiency. The operating temperature of a freshly prepared device was then varied from 296 K to 330 K to simulate heating that might occur during light emitting diode operation. While the current increased in an apparently smooth way as the temperature was raised, electric force microscopy revealed that the underlying injection efficiency had undergone a dramatic change. Above a temperature of 310K, running current through the device led to a dramatic decrease in injection efficiency which was found to be associated with the creation of a dipole layer at the injecting contact. Upon decreasing temperature, we found that a measurable charge remained in the device channel when the applied voltage was switched to zero. The decay of the associated electrostatic potential, which appears to be governed primarily by charge-charge repulsion and not diffusion, provides an estimate the zero-field mobility of the holes in the film.
机译:我们提出了一个电动显微镜和金和TPD之间的接触退化的运输研究,TPD是一种三芳基胺,广泛用作发光二极管的空穴传输层。将TPD分散到聚苯乙烯(PS)粘合剂中,然后旋铸到具有共面金电极的石英基板上。在施加电压并测量电流的同时,用力显微镜观察设备通道中的静电势下降情况。观察到两种接触降解机理。当TPD-PS膜在高真空下老化时,TPD从溶液中结晶出来。我们表明,观察到的电流损耗是体积迁移率降低和注入效率降低的结果。然后将新制备的器件的工作温度从296 K更改为330 K,以模拟在发光二极管工作期间可能发生的加热。虽然电流随着温度的升高以明显平滑的方式增加,但电动显微镜显示基本的注入效率已经发生了巨大变化。高于310K的温度时,流经该器件的电流会导致注入效率急剧下降,这被发现与注入触点处偶极子层的产生有关。随着温度降低,我们发现当施加的电压切换为零时,可测量的电荷保留在设备通道中。似乎主要由电荷-电荷排斥而不是扩散控制的相关静电势的衰减提供了对膜中空穴的零场迁移率的估计。

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