State Key Lab. of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;
rnState Key Lab. of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;
rnState Key Lab. of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;
rnPhotonics RD Center. ROHM CO., LTD. 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan;
rnPhotonics RD Center. ROHM CO., LTD. 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan;
rnState Key Lab. of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;
silicon rich silicon nitride; photoluminescence; ultra-wide spectrum; radiative recombination defects;
机译:富硅SiN_x薄膜的光致发光光谱研究
机译:富硅氮化硅的光致发光:与缺陷相关的状态和硅纳米团簇
机译:用温度依赖性光谱光致发光对N型单晶硅缺陷辐射转变的详细分析
机译:具有超宽谱的光致发光富裕的SIN_X中的缺陷
机译:基于超宽带隙A1N和β-GA2O3的电子设备:器件制造,辐射效应和缺陷表征
机译:通过射频磁控溅射生长的富硅Al2O3膜:结构和光致发光特性与退火处理的关系
机译:Sb掺杂含量对光致发光(PL)光谱和拉曼散射光谱对ZnO膜缺陷的影响研究