Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD, United Kingdom;
rnDepartment of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD, United Kingdom;
rnDepartment of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD, United Kingdom;
rnDepartment of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD, United Kingdom;
rnDepartment of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD, United Kingdom;
rnDepartment of Electronic and Electrical Engineering, University of Sheffiel;
dilute nitride; GaInNAs; InGaAsN; photodetectors; photodiodes; thermal annealing;
机译:利用掺杂了MoO_3的TAPC电子阻挡层降低有机紫外光电探测器中的暗电流密度
机译:退火对量子点红外光电探测器光谱响应和暗电流的影响
机译:退火GaAs-on-Si制成的平面光电检测器的增益和暗电流研究
机译:通过EX原位退火减少IngaAsn光电探测器的暗电流和无意的背景掺杂
机译:验证和减少量子点红外光电探测器上的暗电流。
机译:基于微结的双电子势垒II型InAs / InAsSb超晶格长波长红外光电探测器的暗电流降低
机译:通过异位退火减少InGaAsN光电探测器中的暗电流和意外的背景掺杂