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Enhanced OPC Recipe Coverage and Early Hotspot Detection Through Automated Layout Generation and Analysis

机译:通过自动布局生成和分析,增强了OPC配方的覆盖范围和早期热点检测

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摘要

State-of-the-art OPC recipes for production semiconductor manufacturing are fine-tuned, often artfully crafted parameter sets are designed to achieve design fidelity and maximum process window across the enormous variety of patterns in a given design level. In the typical technology lifecycle, the process for creating a recipe is iterative. In the initial stages, very little to no "real" design content is available for testing. Therefore, an engineer may start with the recipe from a previous node; adjust it based on known ground rules and a few test patterns and/or scaled designs, and then refine it based on hardware results. As the technology matures, more design content becomes available to refine the recipe, but it becomes more difficult to make major changes without significantly impacting the overall technology scope and schedule. The dearth of early design information is a major risk factor: unforeseen patterning difficulties (e.g. due to holes in design rules) are costly when caught late. To mitigate this risk, we propose an automated flow that is capable of producing large-scale realistic design content, and then optimizing the OPC recipe parameters to maximize the process window for this layout. The flow was tested with a triple-patterned 10nm node 1X metal level. First, design-rule clean layouts were produced with a tool called Layout Schema Generator (LSG). Next, the OPC recipe was optimized on these layouts, with a resulting reduction in the number of hotspots. For experimental validation, the layouts were placed on a test mask, and the predicted hotspots were compared with hardware data.
机译:微调了用于生产半导体制造的最新OPC配方,设计了通常精心制作的参数集,以在给定的设计水平上实现跨越各种图案的设计保真度和最大工艺窗口。在典型的技术生命周期中,创建配方的过程是迭代的。在初始阶段,几乎没有“真正的”设计内容可用于测试。因此,工程师可以从上一个节点开始配方。根据已知的基本规则和一些测试模式和/或按比例缩放的设计对其进行调整,然后根据硬件结果对其进行优化。随着技术的成熟,更多的设计内容可用于改进配方,但是在不显着影响总体技术范围和进度的情况下,进行重大更改变得更加困难。缺乏早期设计信息是一个主要的风险因素:迟到时,无法预料的构图困难(例如,由于设计规则中的漏洞)会导致代价高昂。为了减轻这种风险,我们提出了一种自动流程,该流程能够生成大规模的实际设计内容,然后优化OPC配方参数以最大程度地增加此布局的处理窗口。使用三重图案的10nm节点1X金属水准仪测试该流。首先,使用称为布局模式生成器(LSG)的工具生成设计规则的干净布局。接下来,在这些布局上优化了OPC配方,从而减少了热点数量。为了进行实验验证,将版图放置在测试掩模上,并将预测的热点与硬件数据进行比较。

著录项

  • 来源
    《Optical microlithography XXX》|2017年|101470R.1-101470R.9|共9页
  • 会议地点 San Jose(US)
  • 作者单位

    GLOBALFOUNDARIES Inc., 2600 Great America Way, CA, USA;

    Mentor Graphics Corporation, 15 Independence Boulevard, Warren, NJ, USA;

    Mentor Graphics Corporation, 1 Lewis Wharf, Boston, MA, USA;

    GLOBALFOUNDARIES Inc., 2070 Route 52, Hopewell Junction, NY, USA;

    GLOBALFOUNDARIES Inc., 60 Woodlands Industrial Park, Singapore;

    Mentor Graphics Corporation, 78 El-Nozha, Heliopolis, Cairo, Egypt;

    Mentor Graphics Corporation, 78 El-Nozha, Heliopolis, Cairo, Egypt;

    Mentor Graphics Corporation, 8005 SW Boeckman Road, Wilsonville, OR, USA;

    Mentor Graphics Corporation, 8005 SW Boeckman Road, Wilsonville, OR, USA;

    Mentor Graphics Corporation, 1 Lewis Wharf, Boston, MA, USA;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Optical Proximity Correction; Design Technology Co-Optimization;

    机译:光学接近度校正;设计技术共同优化;
  • 入库时间 2022-08-26 13:44:45

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