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Fabricate large area and defect free periodic structures with advance achromatic laser interference lithography

机译:利用先进的消色差激光干涉光刻技术制造大面积且无缺陷的周期性结构

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摘要

Laser interference lithography (LIL) is a great way to produce micro and nano scale periodic structures. The principle of LIL is that two or more coherent laser beams overlap with each other and form a standing wave in the space which can be recorded by the photoresist. However, due to the principle of LIL, exposure result is very sensitive to the light source, especially in large area exposure. Regular defects occurs in large area exposure result when the laser source has multiple longitudinal mode or mode hopping. Therefore, this paper design and build up an advanced achromatic interference lithography system to solve this problem. Due to the principle of achromatic interference lithography, the exposure result is no longer relative to the wavelength of the laser source, and the pitch of the periodic structures is half of the grating pitch. As a result, achromatic interference lithography is able to eliminate the regular defects caused by the unstable laser source. But traditional achromatic interference lithography system is not very efficient due to transmission lost and only first order light is used. This paper build up an advanced achromatic interference lithography system with two reflective blazed gratings. Because of the principle of the reflective blazed grating, we can improve the efficiency of our achromatic interference lithography system. In this paper, 20 mm~2 of large area periodic structures with 420nm pitch and 130 nm linewidth have been successfully fabricated without any defects.
机译:激光干涉光刻(LIL)是产生微米级和纳米级周期性结构的好方法。 LIL的原理是两个或多个相干激光束彼此交叠并在该空间中形成可以由光致抗蚀剂记录的驻波。但是,由于LIL的原理,曝光结果对光源非常敏感,尤其是在大面积曝光中。当激光源具有多个纵向模式或模式跳跃时,大面积曝光结果中会出现常规缺陷。因此,本文设计并建立了一套先进的消色差干涉光刻系统来解决这一问题。由于消色差光刻的原理,曝光结果不再相对于激光源的波长,并且周期性结构的间距是光栅间距的一半。结果,消色差干涉光刻能够消除由不稳定的激光源引起的规则缺陷。但是传统的消色差干涉光刻系统由于传输损失而效率不高,仅使用一阶光。本文建立了具有两个反射闪耀光栅的先进的消色差干涉光刻系统。由于反射闪耀光栅的原理,我们可以提高消色差干涉光刻系统的效率。本文成功地制造了20mm〜2的大面积周期结构,节距为420nm,线宽为130nm,没有任何缺陷。

著录项

  • 来源
    《Optical microlithography XXIX》|2016年|978017.1-978017.8|共8页
  • 会议地点 San Jose CA(US)
  • 作者单位

    Department of Power Mechanical Engineering, National Tsing Hua University, Taiwan, R.O.C.;

    Institute of NanoEngineering and MicroSystem, National Tsing Hua University, Taiwan, R.O.C.;

    Department of Power Mechanical Engineering, National Tsing Hua University, Taiwan, R.O.C.;

    Department of Power Mechanical Engineering, National Tsing Hua University, Taiwan, R.O.C.,Institute of NanoEngineering and MicroSystem, National Tsing Hua University, Taiwan, R.O.C.;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Laser; achromatic interference lithography; large area; blazed grating;

    机译:激光;消色差干涉光刻;大面积;炽热的光栅;

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