Application of photo-doping phenomenon in amorphous chalcogenide GeS_2 film to optical device

摘要

Photodoping phenomenon is observed when a double-layer consisting of an amorphous chalcogenide film (As_2S_3, GeS_2, GeSe_2 etc.) and a metal (Ag, Cu etc.) film is illuminated by light. The metal diffuses abnormally into the amorphous chalcogenide layer. Amorphous chalcogenide films of GeS_2 with an Ag over layer exhibited large increase of refractive index through the abnormal doping of Ag by irradiating the light around the absorption edge of the GeS_2 chalcogenide. In this study, we aimed the application of this effect for the fabrication of optical devices and fabricated various micro doped patterns by using a laser beam. Mask less pattering with refractive index modified films are possible by manipulating the scanning of the laser beam. Micro gratings were fabricated using a confocal laser microscope to work as both fabrication and observation system. Waveguides were also fabricated b y scanning the laser beam for photodoping. Holographic gratings were fabricated by utilizing the photodoping of the two beam interference pattern, which showed the possibility to produce large scale optical devices or mass production.