Electrically Pumped InAs Single Quantum Dot Emitter

摘要

We report on a miniature solid state emitter structure, which allows electrical pumping of only one single InAs quantum dot (QD) grown in the Stranski-Krastanow mode. The emitter is based on a single layer of low density (～10~8 cm~(-2)) QDs grown by Molecular Beam Epitaxy and a submicron AlO_X current aperture defined by selective oxidation of high aluminium content AlGaAs layers. The device demonstrates strongly monochromatic polarized emission of the single QD exciton at subnanoampere current pumping. No other emission is observed across a spectral range of 500 nm, proving that indeed just one single QD is contributing. Correlation measurements of the emitted photons show a clear antibunching behavior.