首页> 外文会议>NSTI Nanotechnology Conference and Trade Show(NSTI Nanotech 2005) vol.1; 20050508-12; Anaheim,CA(US) >Ion Channel Simulations Using the TR-PNP Model and the Excess Chemical Potential Approach
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Ion Channel Simulations Using the TR-PNP Model and the Excess Chemical Potential Approach

机译:使用TR-PNP模型和过量化学势方法进行离子通道模拟

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We describe a new method referred to as TR-PNP model to study general types of nanostructure ion channels. Our method extends the common continuum methods to include particle like properties, such as ion trapping and release effects. A previously known approach to deal with those effects is the excess chemical potential method. The Eyring rate theory is utilized to connect the two methodologies. We implement a toy channel model with single binding site in terms of both approaches, and demonstrate their equivalence under steady state conditions. Then we perform a time dependent simulation (timescale:μs) on another toy channel with two binding sites by using the TR-PNP model. Our results quantitatively illustrate the hopping process of ions from one site to the other. This method is therefore a good candidate to be integrated into a multi-scale simulation framework to provide a bridge between continuum and particle methods.
机译:我们描述了一种称为TR-PNP模型的新方法,用于研究纳米结构离子通道的一般类型。我们的方法将常见的连续谱方法扩展到包括类似粒子的特性,例如离子捕获和释放效果。处理这些影响的先前已知方法是过量化学势方法。 Eyring率理论用于连接这两种方法。我们在两种方法上都实现了具有单个结合位点的玩具通道模型,并证明了它们在稳态条件下的等效性。然后,我们使用TR-PNP模型在具有两个绑定位点的另一个玩具通道上执行时间相关的仿真(时间尺度:μs)。我们的结果定量地说明了离子从一个位置到另一个位置的跳跃过程。因此,此方法是集成到多尺度仿真框架中的理想方法,以在连续方法和粒子方法之间架起桥梁。

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