Pulsed Laser Deposition of Nanostructured Indium-Tin-Oxide Film

摘要

Effects of O_2, N_2, Ar and He on the formation of micro- and nanostructured indium tin oxide (ITO) thin films were investigated in pulsed Nd:YAG laser deposition on glass substrate. For O_2 and Ar, ITO resistivity of ＜4 × 10~(-4) Ωcm and optical transmittance of＞ 90% were obtained with substrate temperature of 250 ℃. For N_2 and He, low ITO resisitivity could be obtained but with poor optical transmittance. SEM images show nano-structured ITO thin films for all gases, where dense, larger and highly oriented, microcrystalline structures were obtained for deposition in O_2 and He, as revealed from the XRD lines. EDX results indicated the inclusion of Ar and N_2 at the expense of reduced tin (Sn) content. When the ITO films were applied for fabrication of organic light emitting devices (OLED), only those deposited in Ar and O_2 produced comparable performance to single-layer OLED fabricated on the commercial ITO.