Analysis and Design of Key Phenomena in Electronics: Nanostructures and Devices

摘要

We have developed techniques to model electron dynamics in carbon nanotubes and hypothetical field effect devices that incorporate nanotubes into their structure. We use both Monte Carlo methods that are based on semiclassical transport, and distributed analyses that utilize quantum corrected semiconductor equations. The MC calculations predict velocity oscillations that are spatially distributed along the carbon nanotube. A quantum corrected semiconductor mathematical model is presented for CNT-MOSFET device simulation. Calculations predict improved performance of CNT-MOSFETs over conventional structures under certain conditions.