Compact modeling of drain current in Independently Driven Double-Gate MOSFETs

摘要

A compact model for the drain current in Independently Driven Double-Gate (IDDG) MOSFETs is proposed. The model takes into account 2D electrostatics and vertical carrier quantum confinement in the channel. An extensive comparison with numerical data obtained using a full 2D quantum numerical code is performed. The model is shown to fit with a good accuracy numerically simulated quantum drain current in Double-Gate devices with either independent or connected gates.