A compact drain current model based on Genetic algorithm computation to study the nanoscale Double-Gate MOSFETs

摘要

Simulations tools thath can be applied to design nanoscale transistors in the future require a new theory and modeling techniques, which capture physics of quantum transport accurately and efficiently. In this paper, we apply the Genetic algorithm technique to study nanoscale Double-Gate MOSFETs. The developed model is particularly well-adapted to ultra-scale devices with short channel lengths and ultra-thin silicon films. Extracted parameter values reproduce characteristics within 7 % RMS error for wide range of gate lengths.