Ultrashallow p+-n junctions formed by diffusion from an RTCVD-deposited B:Ge layer

摘要

Abstract: The rapid thermal chemical vapor deposition of heavily boron-doped Ge layers on silicon substrates is characterized and optimized for the purpose of ultrashallow junction applications. Incorporation of a very high concentration of boron in the Ge layer is observed with a moderate flow rate (2 - 20 sccm) of 1% B$-2$/H$-6$/ in hydrogen. The surface coverage of the B:Ge layer depends strongly on the B$-2$/H$-6$/ flow rate, favoring higher content of boron for better coverage. The substrate temperature during deposition also shows a strong effect on the film morphology with 550$DGR@C yielding the most uniform surface.!15