Fabrication of sub-40-nm p-n junctions for 0.18-um MOS deviceapplications using a cluster-tool-compatible, nanosecond thermal dopingtechnique,

摘要

Abstract: In this paper, we introduce an alternative deep-submicrometer doping technology, Projection Gas Immersion Laser Doping (P-GILD). Representing the marriage of lithography and diffusion, P-GILD is a resistless, step-and-repeat doping process that utilizes excimer laser light patterned by a dielectric reticle to selectively heat and, thereby, dope regions of an integrated circuit. Results of physical and electrical characterization are presented for ultra-shallow p$+$PLU$/-n and n$+$PLU$/-p junctions produced by gas immersion laser doping (GILD), a phenomenologically identical technique that utilizes an aluminum contact mask rather than a dielectric reticle to pattern the beam. Junctions produced using GILD exhibit uniformly-doped, abrupt impurity profiles with no apparent defect formation in the silicon.!16