Fabrication of sub-40-nm p-n junctions for 0.18-um MOS device applications using a cluster-tool-compatible nanosecond thermal doping technique

摘要

Abstract: In this paper, we introduce an alternativedeep-submicrometer doping technology, Projection GasImmersion Laser Doping (P-GILD). Representing themarriage of lithography and diffusion, P-GILD is aresistless, step-and-repeat doping process thatutilizes excimer laser light patterned by a dielectricreticle to selectively heat and, thereby, dope regionsof an integrated circuit. Results of physical andelectrical characterization are presented forultra-shallow p$+$PLU$/-n and n$+$PLU$/-p junctionsproduced by gas immersion laser doping (GILD), aphenomenologically identical technique that utilizes analuminum contact mask rather than a dielectric reticleto pattern the beam. Junctions produced using GILDexhibit uniformly-doped, abrupt impurity profiles withno apparent defect formation in the silicon.!16