首页> 外文会议>Microwave Photonics, 2009. MWP '09 >Experimental analysis of two measurement techniques to characterize photodiode linearity
【24h】

Experimental analysis of two measurement techniques to characterize photodiode linearity

机译:表征光电二极管线性度的两种测量技术的实验分析

获取原文

摘要

As photodiodes become more linear, accurately characterizing their linearity becomes very challenging. We compare the IMD3 results from a standard two tone measurement to those from a more complex three tone measurement technique. A Ge n-i-p waveguide photodetector on Silicon-on-Insulator (SOI) substrate is used for the comparison. Additionally, we analyze, via simulation, the limitations of the measurement system in determining the distortion of highly linear photodiodes.
机译:随着光电二极管变得越来越线性,准确表征其线性变得非常具有挑战性。我们将标准两音调测量的IMD3结果与更复杂的三音调测量技术的结果进行比较。绝缘体上硅(SOI)衬底上的Ge n-i-p波导光电探测器用于比较。此外,我们通过仿真分析确定高线性光电二极管失真时测量系统的局限性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号