Nanosecond Relaxation in GaAs

机译：砷化镓中的纳秒弛豫

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A new technique for analytic definition of GaAs impulse conductivity is proposed. It is based on the relaxation equations of pulse, energy and concentration conservation, as well as on the analysis of relaxation times for different scattering effects. The

机译：提出了一种解析定义GaAs脉冲电导率的新技术。它基于脉冲，能量和浓度守恒的弛豫方程，以及对不同散射效应的弛豫时间的分析。的

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《Microwave and Telecommunication Technology, 2006 16th International Crimean》|2006年|P.633-634|共2页
会议地点 SevastopolUkraine
作者
V. A. Moskalyuk; K. V. Kulikov;
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III-V semiconductors; electrical conductivity; gallium arsenide; GaAs; impulse conductivity; nanosecond pulses generation; nanosecond relaxation; relaxation equations; relaxation times; scattering effects;

机译：III-V半导体；电导率砷化镓砷化镓;脉冲电导率纳秒脉冲产生；纳秒松弛；松弛方程放松时间；散射效应;

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专利

1. Analysis of strain relaxation in GaAs/InGaAs/GaAs structures by spectroscopy of relaxation-induced states [J] . J. F. Chen, C. H. Chiang, P. C. Hsieh, Journal of Applied Physics . 2007,第3期

机译：GaAs / InGaAs / GaAs结构中应变弛豫的光谱分析
2. Sub-nanosecond access time 2K sine-cosine-ROM in AlGaAs/GaAs/AlGaAs quantum well HEMT technology [J] . Thiede A., Bushehri E. Electronics Letters . 1997,第5期

机译：AlGaAs / GaAs / AlGaAs量子阱HEMT技术中的亚纳秒访问时间2K正弦余弦ROM
3. Electron Spin Relaxations in the Electric-Field Applied GaAs/InGaAs Heterostructure [J] . Y. Sato, Y. Takahashi, Y. Kawamura, Journal of Superconductivity . 2005,第2期

机译：电场应用的GaAs / InGaAs异质结构中的电子自旋弛豫
4. Nanosecond Relaxation in GaAs [C] . V. A. Moskalyuk, K. V. Kulikov . 2006

机译：砷化镓中的纳秒弛豫
5. Nanosecond Pulse Electroporation of Biological Cells: The Effect of Membrane Dielectric Relaxation. [D] . Salimi, Elham. 2011

机译：纳秒脉冲电穿孔的生物细胞：膜介电弛豫的影响。
6. Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures [O] . Serhiy V. Kondratenko, Sviatoslav A. Iliash, Oleg V. Vakulenko, 2017

机译：InGaAs / GaAs量子点链结构的光电导弛豫机理
7. Slow relaxations of magnetoresistance in AlGaAs-GaAs quantum well structures quenched in a magnetic field [O] . Agrinskaya, N. V., Kozub, V. I., Shamshur, D. V., 2010

机译：alGaas-Gaas量子阱中磁阻的缓慢弛豫结构在磁场中淬火

Nanosecond Relaxation in GaAs

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