首页> 外文会议>Microscopy of semiconducting materials 1999 >Impact of strain relaxation induced local crystal tilts on the quanti-tative evaluation of microstructure by high-resolution transmission electron microscopy
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Impact of strain relaxation induced local crystal tilts on the quanti-tative evaluation of microstructure by high-resolution transmission electron microscopy

机译:应变松弛引起的局部晶体倾斜对高分辨率透射电子显微镜对微观结构定量评估的影响

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摘要

The reliability of strain profiles obtained by a quantitative analysis of lattice fringe spacings from hgih-resolution micrographs is discussed.Focusing on highly lattice mismatched GaAs/InAs/GaAs heterostructures the layer local strain distribution is calculated by finite element method simulations to determine atom positions in elastically relaxed transmission electron microscopy specimens.By analysing simulated images a significant decoupling between the contrast pattern motifs and the layer structure is found for relevant imaging conditions,which may result in an incorrect determination of strain profiles and layer compositions when examining experimental micrographs.
机译:讨论了通过高分辨率解析显微照片对晶格条纹间距进行定量分析而获得的应变曲线的可靠性。针对高度晶格失配的GaAs / InAs / GaAs异质结构,通过有限元方法模拟计算层局部应变分布,从而确定原子位置。通过分析模拟图像,可以发现在相关成像条件下,对比图案的图案和层结构之间存在显着的解耦,这可能导致在检查实验显微照片时不正确地确定应变曲线和层组成。

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