TEM characterisation of free standing GaInP stranski-krastanow islands grown by MOVPE on GaP substrates

摘要

GaInP Stranski-Krastanow islands have been grown on GaP substrates.The fabricated islands can be diveided in three classes: flat rounded islands,small faceted islands and larger faceted islands.The predominant class is the small faceted islands which are on average 10 nm high and hav ea base width of approximately 30 nm.the Ga/In ratio in these islands is 40/60.