Study of the relaxation in InGaAs SQW grown on (111)B substrates

摘要

The critical layer thickness was experimentally determinated by transmission electron microscopy through direct observation of misfit dislocations in an InGaAs single quantum well grown on (111)B GaAs substrates.For high In-content,a new configuration of misfit dislocation network was found.This consists of <112> dislocation lines and 1/2<110> Burgers vectors which are contained in the growth plane.The strain relief intensity of this new network is larger than that of the classical network for low In-content.This implies two different elaxation mechanisms depending on In-content.