titanium disilicide nanoislands on Si (001) surfaces

摘要

Both common phases of titanium disilicide form islands on Si(001) surfaces.At temperatures up to about 850 deg C the C49 phase forms,with two related (4x4) reconstructions on (010) faces.At higher temperatures the C54 phase forms,with unreconstructed (110) faces.Current imaging tunneling spectroscopy reveals straight parallel fringes crossing flat C49 islands.By comparing with plan and cross sectional view TEM,and with Fourier analysis of STM images,it is possible to relate these fringes to the incommensurate TiSi_2(010)/Si(001) interface.