Conductance Modeling of High-A Al_2O_3 Gate Dielectrics Prepared by Oxidation of Aluminum Thin Films

摘要

High-quality thin layers of high-k gate dielectrics with high quality and performance, including low leakage current, has become a great challenge in order to increase the scale of integration of miniaturized components and circuits (1). To decrease the gate leakage current and increase the gate capacitance, high dielectric constant materials have been studied to replace the conventional silicon oxinitride (SiO_xN_y) as gate dielectric (1,2). High gate capacitance means low equivalent oxide thickness (EOT) and allows better control of the electric charges in the channel regions as well as low gate leakage current reduces standby power dissipation (1,2).