Design, simulation, and fabrication of a new poly-Si based capacitor-less 1T-DRAM cell

摘要

In this paper, we propose a new fabrication method to form a polysilicon thin-film transistor with a smiling SiO2 layer. The experimental results suggest that the short-channel effects can be significantly reduced because the trench oxide is utilized to block the drain electric field. Furthermore, the so-called S/D tie can help to overcome the self-hating for enhancing the thermal reliability. And the device fabrication process is fully compatible with current conventional CMOS technology.