Failure Mechanisms and comparative study of ruggedness in IGBTs Devices (IR, IXYS)

摘要

This paper present a detailed study of performance of two the most commercially available IGBT for International Rectifier and IXYS e.g. IRGBC40 (S, F,U) and IXGH40N60A, when subjected to two such stressful conditions short circuit operation and unclamped inductive switching and it takes into account specific phenomena limiting its SOA (Safe Operation Area), avalanche, second breakdown as well as latch up. As both these tests conditions are potentially destructive, it is extremely cost efficient to model the device performance under these conditions. The need of a good physics based simulation to carry out a reliability study is pointed out in this paper. An explanation comparison of ruggedness of IRGBC40 (S,F,U) as well as of IXGH40N60A which leads to a fundamental understanding of physics of two devices.