A proposition on test circuit structures using selectively metal-covered transistors for a laser irradiation failure analysis

摘要

A quick and easy laser experiment for photocurrent induced failure investigations has been described. In order to focus a laser beam on a desired transistor in complex LSI circuits, novel test circuit structures using selectively metal-covered transistors have been proposed. Photocurrent induced failures have been successfully observed in a target CMOS inverter with an SR Flip Flop detector. The laser irradiation failures have also been observed in a selectively metal-covered CMOS SRAM test cell.