Reliability Physics Lab., Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing 100022, P.R. China;
Reliability Physics Lab., Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing 100022, P.R. China;
Reliability Physics Lab., Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing 100022, P.R. China;
Reliability Physics Lab., Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing 100022, P.R. China;
Reliability Physics Lab., Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing 100022, P.R. China;
Reliability Physics Lab., Dept. of Electronic Engineering, Beijing Polytechnic University, Beijing 100022, P.R. China;
Reliability Physics Lab., Dept. of Electronic Engineering, Beijing Polytechnic University, B;
机译:GaAs MESFET在雪崩击穿条件下工作时发出的红外光
机译:GaAs MESFET和PHEMT的安全工作区域,可在超速工作条件下进行放大
机译:W / sub 1-xy / Si / sub x / N / sub y /(0 / spl les / x / spl les / 0.42,0 / spl les / y / spl les / 0.30)的电气和化学特性自对准栅极GaAs MESFET
机译:在正常操作条件下测量GaAs Mesfet的T_(CH)的电气技术
机译:GaAs / AlGaAs系统的异质结:通过金属有机化学气相沉积进行的晶体生长以及使用电容电压技术进行表征,以确定导带不连续性
机译:评估各种操作条件和溶剂下芝麻油萃取的多种建模技术
机译:在高环境温度下工作的基于GaAs的MESFET,HEMT和HBT的微波表征和性能比较