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Low Temperature Rectifying Junctions for Crossbar Non-Volatile Memory Devices

机译：纵横制非易失性存储设备的低温整流结

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摘要

ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 10⁷ and forward current density as high as 10⁴ A/cm² are reported. Results of the integration with NiO based switching memory elements are also shown.

机译：提出了在低温下制造的基于ZnO的肖特基结，作为交叉开关非易失性存储器件的选择器。据报道，整流比超过10 ^{7 ，正向电流密度高达10 ^{4 A / cm ^{2 。还显示了与基于NiO的开关存储元件集成的结果。}}}

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《Memory Workshop, 2009. IMW '09》|2009年|1-3|共3页
会议地点 Monterey CA(US);Monterey CA(US)
作者
Tallarida G.; Huby N.; Kutrzeba-Kotowska B.; Spiga S.; Arcari M.; Csaba G.; Lugli P.; Redaelli A.; Bez R.;
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Lab. Naz. MDM, CNR-INFM, Agrate Brianza;

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II-VI semiconductors; Schottky diodes; cryogenic electronics; nitrogen compounds; random-access storage; rectification; wide band gap semiconductors; zinc compounds; NiO; Schottky junction fabrication; ZnO; crossbar nonvolatile memory devices; forward current density; low-temperature rectifying junction; switching memory element;

机译：II-VI半导体;肖特基二极管;低温电子设备;氮化合物;随机存取存储;整流;宽带隙半导体;锌化合物; NiO;肖特基结制造; ZnO;纵横交叉非易失性存储器件;正向电流密度;低温整流结；开关存储元件;

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1. MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays [J] . Rohit S Shenoy, Geoffrey W Burr, Kumar Virwani, Semiconductor science and technology . 2014,第10期

机译：用于非易失性交叉开关存储阵列的基于MIEC（混合离子电子导电）的访问设备
2. TiOx-based self-rectifying memory device for crossbar WORM memory array applications [J] . Li-Ping Fu, Xiao-Qiang Song, Xiao-Ping Gao, 中国物理：英文版 . 2021,第001期

机译：基于TIOX的横杆蠕虫内存阵列应用的自整流存储器件
3. Correction to “An Organic-Based Diode–Memory Device With Rectifying Property for Crossbar Memory Array Applications” [J] . Teo E. Y. H., Zhang C., Lim S. L., Electron Device Letters, IEEE . 2009,第11期

机译：更正为“具有针对交叉开关存储阵列应用的整流特性的有机二极管存储设备”
4. Low temperature rectifying junctions for crossbar non-volatile memory devices [C] . G. Tallarida, N. Huby, B. Kutrzeba-Kotowska, IEEE International Memory Workshop . 2009

机译：用于横杆非易失性存储器件的低温整流开关
5. Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications [D] . Hong, Augustin Jinwoo 2010

机译：用于超高密度，低功耗非易失性存储应用的高性能金属氧化物半导体器件的技术突破
6. A fast and low-power microelectromechanical system-based non-volatile memory device [O] . Sang Wook Lee, Seung Joo Park, Eleanor E. B. Campbell, -1

机译：基于快速和低功耗微机电系统的非易失性存储设备
7. Integration of organic based Schottky junctions for crossbar non-volatile memory applications [O] . Katsia E., Tallarida G., Ferrari S., 2008

机译：有机基肖特基结的集成，适用于横杆非易失性存储器应用

Low Temperature Rectifying Junctions for Crossbar Non-Volatile Memory Devices

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