Impact of Dimensional Effects on Subsurface Leakage Current of a Low-VTh Nanoscale MOSFET Under Accumulation Bias

机译：累积偏置下尺寸效应对低VTh纳米MOSFET地下泄漏电流的影响

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来源
《International conference on VLSI, communication, and signal processing》|2018年|587-595|共9页
会议地点 Allahabad(IN)
作者
Vadthiya Narendar; Ashutosh Kumar Pandey;
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作者单位

National Institute of Technology Warangal Warangal 506004 Telangana India;

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会议组织
原文格式 PDF
正文语种
中图分类
关键词
Leakage current; Nanoscale device; Subsurface leakage current; Zero-V_(TH) MOSFET;

机译：漏电流;纳米器件地下泄漏电流;零V_（TH）MOSFET;

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1. 硅与二氧化硅界面的有限尺寸效应对纳米晶体管栅漏电流的影响 [J] . 李海霞, 季爱明, 朱灿焰, 东南大学学报（英文版） . 2019,第003期
2. Modeling of Subsurface Leakage Current in Low src="/images/tex/34079.gif" alt="V_{mathrm {TH}}"> Short Channel MOSFET at Accumulation Bias [J] . Yen-Kai Lin, Sourabh Khandelwal, Aditya Sankar Medury, IEEE Transactions on Electron Devices . 2016,第5期

机译：低中的地下漏电流建模 src =“ / images / tex / 34079.gif” alt =“ V_ {mathrm {TH}}”> 累积偏置时的短沟道MOSFET
3. The Effects of the Injection-Channel Velocity on the Gate Leakage Current of Nanoscale MOSFETs [J] . Mao L. IEEE Electron Device Letters . 2007,第期

机译：注入通道速度对纳米级MOSFET栅极漏电流的影响
4. Two-Dimensional Tunneling Effects on the Leakage Current of MOSFETs With Single Dielectric and High- $kappa$ Gate Stacks [J] . Luisier M., Schenk A. IEEE Transactions on Electron Devices . 2008,第6期

机译：二维隧穿效应对具有单介电层和高kappa $栅堆叠的MOSFET漏电流的影响
5. Impact of Dimensional Effects on Subsurface Leakage Current of a Low-VTh Nanoscale MOSFET Under Accumulation Bias [C] . Vadthiya Narendar, Ashutosh Kumar Pandey International conference on VLSI, communication, and signal processing . 2020

机译：在积累偏压下，尺寸效应对低Vth纳米级MOSFET的地下漏电流的影响
6. Schrodinger Equation Monte Carlo in three dimensions for simulation of nanoscale MOSFETs. [D] . Liu, Keng-Ming. 2008

机译：三维Schrodinger方程Monte Carlo模拟纳米MOSFET。
7. A quasi-ballistic drain current charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime [O] . Vyas R. Murnal, C. Vijaya 2019

机译：具有位置载流子散射相关性的准弹道漏电流电荷和电容模型对纳米级对称DG MOSFET有效
8. Two dimensional analytical threshold voltage model of nanoscale strained Si/Si1-xGex MOSFETs including quantum mechanical effects [O] . Siew Kang Eng, Heong Yau Wei, Anwar Sohail, 2012

机译：包含量子力学效应的纳米级应变Si / Si1-xGex MOSFET的二维分析阈值电压模型

Impact of Dimensional Effects on Subsurface Leakage Current of a Low-VTh Nanoscale MOSFET Under Accumulation Bias

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