InGaAs/AlAs Metamorphic Asymmetric Spacer Tunnel (mASPAT) Diodes on GaAs Substrate for Microwave/millimetre-wave Applications

摘要

A novel, metamorphic Asymmetric Spacer Tunnel (mASPAT) diode structure was grown by solid source Molecular Beam Epitaxy (MBE) system. A metamorphic HEMT (mHEMT) structure was used to optimize the quality of the grown material. Photoluminescence, X-Ray diffraction and Hall Effect were used to assess the material quality. Following the growth of the mASPAT structure using the optimal growth condition, diodes with different mesa sizes were fabricated and characterised. The I–V characteristics of the fabricated devices show asymmetric behavior as expected. The extracted junction resistance, curvature coefficient and the leakage current at ?1V show the potential use of the fabricated mASPAT devices on GaAs as a low-cost and high-volume microwave and millimeter-waves detectors.