Impact of platinum incorporation on thermal stability and interface resistance in NiSi/Si junctions based on first-principles calculation

摘要

We studied extremely low interface resistance and thermal stability of the interface of NiSi/Si junctions with Pt (Ni(Pt)Si/Si junctions) based on first-principles calculation. The physical origin of thermal stability of NiSi enhanced by Pt is clarified by the calculations. Our calculations show clear difference of energies for dopant atoms of As and B between PtSi/Si and NiSi/Si. The results obtained theoretically and experimentally in this study demonstrate the dipole comforting Schottky junctions enhanced by PtSi at the interface for extremely low resistance.