Monolithic Integration of Lateral Field-Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters

摘要

A lateral field-effect rectifier (L-FER) that can be fabricated with normally-off transistor on the same AlGaN/GaN HEMT with the same fabrication process has been demonstrated. The L-FER exhibits low turn-on voltage, low specific on-resistance and high reverse breakdown. A prototype of switch-mode dc-dc Boost converter that features monolithically integrated L-FER and normally-off HEMT is demonstrated for the first time using industry-standard GaN-on-Si epitaxial wafers to prove the feasibility of GaN power inegrated technology.