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机译:使用单片集成式AlGaN / GaN横向场效应整流器和常关型HEMT的单芯片Boost转换器
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon;
III-V semiconductors; aluminium compounds; convertors; gallium compounds; high electron mobility transistors; monolithic integrated circuits; rectifiers; wide band gap semiconductors; AlGaN-GaN; monolithic integrated lateral field-effect rectifier; normally off HEMT; normally off transistor; single-chip boost converter; size 15 mum; voltage 0.58 V; voltage 470 V; AlGaN/GaN; boost converter; field-effect rectifier (FER); fluorine plasma ion implantation; normally-off HEMT; switch-mode power supply;
机译:低开启电压AlGaN / GaN横向场效应整流器与P-GaN门HEMT技术兼容
机译:具有低开启电压的大面积横向AlGaN / GAN-ON-SI场效应整流器
机译:AlGaN / GaN横向场效应整流器(L-FER)的器件几何相关反向恢复特性研究
机译:横向场效应整流器与常压锚杆用于GAN-on-SI开关模式电源转换器的单片集成
机译:GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
机译:0.1μmAlGaN / GaN高电子迁移率晶体管(HEMT)工艺的改进大信号模型及其在W波段实用单片微波集成电路(MMIC)设计中的应用
机译:高压ALN / GAN超晶格缓冲器上的单片集成ALGAN / GAN电源转换器拓扑