首页> 外国专利> NORMALLY-OFF COMPOSITE POWER DEVICE AND MONOLITHIC INTEGRATED NORMALLY-OFF COMPOSITE POWER DEVICE

NORMALLY-OFF COMPOSITE POWER DEVICE AND MONOLITHIC INTEGRATED NORMALLY-OFF COMPOSITE POWER DEVICE

机译:常闭型复合动力装置和单相集成常闭型复合动力装置

摘要

PROBLEM TO BE SOLVED: To provide a normally-off (enhancement-type) composite power device including an electrostatic discharge (ESD) protection clamp.;SOLUTION: A normally-off composite power device 200 includes: a normally-on (depletion-type) power transistor 210 forming a composite drain 202 of a normally-off composite device; and a normally-off low-voltage (LV) transistor 220 cascode-connected with the normally-on power transistor. A composite source 204 and a composite gate 206 of the normally-off composite power device are formed by the normally-off low-voltage transistor. The normally-off composite power device also includes an ESD protection clamp 230 connected between the composite source and the composite gate. The ESD protection clamp is configured to protect the normally-off composite power device from ESD.;COPYRIGHT: (C)2015,JPO&INPIT
机译:解决的问题:提供包括静电放电(ESD)保护夹的常关型(增强型)复合功率器件。解决方案:常关型复合型功率器件200包括:常开型(耗尽型) )功率晶体管210,形成常关复合器件的复合漏极202;常闭型低压(LV)晶体管220与常通型功率晶体管共源共栅。常关型复合功率器件的复合源204和复合栅极206由常关型低压晶体管形成。常关复合功率器件还包括连接在复合源和复合栅极之间的ESD保护钳位230。 ESD保护夹被配置为保护常关复合功率器件免受ESD的影响。; COPYRIGHT:(C)2015,JPO&INPIT

著录项

  • 公开/公告号JP2015115608A

    专利类型

  • 公开/公告日2015-06-22

    原文格式PDF

  • 申请/专利权人 INTERNATIONAL RECTIFIER CORP;

    申请/专利号JP20140245676

  • 发明设计人 MICHAEL A BRIERE;

    申请日2014-12-04

  • 分类号H01L21/822;H01L27/04;H01L27/06;H01L21/8236;H01L27/088;

  • 国家 JP

  • 入库时间 2022-08-21 15:34:17

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